Metal-oxide-silicon diodes on deuterium-implanted silicon substrate
نویسنده
چکیده
Ion implantation was used to incorporate deuterium at the Si–SiO2 interface. Polycrystalline silicon gate metal-oxide-semiconductor diodes with 4 nm oxide grown on deuterium-implanted p-type ^100& silicon substrate were investigated. It was observed that deuterium implantation at a light dose of 1310/cm at 25 keV reduced oxide leakage current due to reduction in oxide charge and interface traps. Low-energy implant indicates possible deuterium loss during oxidation whereas in case of higher energy implant, the observed degradation was caused by enhanced substrate damage. Interface state density D it as obtained from the conductance measurements suggests that implanted deuterium passivates the interface traps. © 2000 American Institute of Physics. @S0003-6951~00!04721-5#
منابع مشابه
Interface Hardening with Deuterium Implantation
Incorporation of deuterium to passivate silicon-dangling bonds at the Si-SiO2 interface through ion implantation before the growth of the gate oxide is the focus of this work. Polycrystalline silicon gate n-channel metal-oxide-semiconductor diodes with 4 nm gate oxide grown on deuterium-implanted p-type silicon ^100& substrate were investigated. Deuterium implanted at a light dose of 1 3 10/cm ...
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